Micron Technology DRAM SDRAM, Part #MT41K512M16VRP-107 AAT:P TR | Dynamic random access memory | DEX 34458 It also offers unique features

It also offers unique features such as separate pull-up/down outputs

GE Water Phantom 20 CM Part# 5432878-200

and temperature

BDPLANAR MBBNOK MT8173CUMA4G32G W/WA/MYL

and dynamic on-die termination (ODT) • Data bus inversion (DBI) for data bus • Command/Address (CA) parity • Databus write cyclic redundancy check (CRC) • Per-DRAM addressability • Connectivity test • Hard post package repair (hPPR) and soft post package repair (sPPR) modes • JEDEC JESD-79-4 compliant

Micron Technology DRAM SDRAM, Part #MT41K512M16VRP-107 AAT:P TR | Dynamic random access memory | DEX 34458 It also offers unique featuresThe 8Gb (TwinDie) DDR3L SDRAM (1. 35V) uses two Micron 4Gb DDR3L SDRAM x8 die for a 2 byte x16 device in one package. Features Uses two x8, 4Gb Micron die to make one x16 package Single rank TwinDie One external ZQ ball and one internal ZQ connected to VSSQ through an embedded serial resistor VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Differential bidirectional data strobe 8n bit prefetch architecture